- Course Code
- BME224
- Semester
- Fourth Term (Spring)
- Theory+Practice
- 3 + 2
- ECTS
- 5
| Course Type | Compulsory Course |
|---|
| Course Level | Bachelor's Degree |
|---|
| Year of Study | 2 |
|---|
| Semester | Fourth Term (Spring) |
|---|
| ECTS | 5 |
|---|
| Name of Lecturer(s) |
- |
| Learning Outcomes |
At the end of this course, the students;
- Identify the materials used in electronic technology.
- Know the structure of various diodes and types, practice fields and apply diodes circuits.
- Learn the structure of BJT, JFET and MOSFET transistors, usage in practice, circuits models and analysis them.
- Design the circuits that contain the BJT, JFET and MOSFET transistors.
- Confirm the theoretical knowledge with experiment.
|
| Mode of Delivery | Face to face |
|---|
| Prerequisites | Yes(BME220) |
|---|
| Recommended Optional Programme Components | None |
|---|
| Course Description | Fundamental solid-state principles: doping, PN junction, bias. Diode models and applications: load-line analysis, AND/OR gates, rectifiers and voltage multipliers, clippers, clampers and Zener voltage regulators. Bipolar junction transistors, PNP and NPN types, characteristics, common-emitter, common-base and common-collector configurations, basic biasing circuits and applications. BJT amplifiers. Switching networks. Field effect transistors, biasing circuits and applications. Junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET) transistors and applications. Analysis and design of circuits with FET. Universal JFET bias curve. Combination BJT and FET networks. |
|---|
| Course Contents |
| WEEK |
TOPICS |
|
1st Week |
Introduction and Semiconductor Materials, P-N types of material, PN junction |
|
2nd Week |
Diodes. AC and DC Resistance. Load line analysis, DC Analysis. Parallel and Series-Parallel Configurations. |
|
3rd Week |
Diode Applications. Rectifiers, Clampers and Clippers. |
|
4th Week |
Diode Applications. Voltage-Multiplier Circuits. Zener Diodes. |
|
5th Week |
BJT Transistors. CB, CE, CC Characteristics. Amplifying operation. |
|
6th Week |
BJT Transistors. Bias Circuits. Transistor Types, Specifications. |
|
7th Week |
BJT Transistors DC load line, state of operate, switching operating. |
|
8th Week |
MIDTERM |
|
9th Week |
Small Signal Parameter Equivalents. Small Signal Models. |
|
10th Week |
BJT Small Signal Analysis. |
|
11th Week |
FET Transistors. Biasing.. |
|
12th Week |
MOSFET Transistors. Characteristics, Bias Circuits. |
|
13th Week |
FET, MOSFET Amplifiers. Practical Applications. Design. |
|
14th Week |
Effects of load and source resistance, Combination BJT and FET networks. |
|
| Recommended or Required Reading | Robert L. Boylestad, Louis Nashelsky Electronic devices and Circuit Theory/ 9E, 2008 Prentice Hall
Electronic Fundamentales, Floyd, T.L. Macmillan Pub
|
|---|
| Planned Learning Activities and Teaching Methods |
- Lecture
- Presentation
- Experiment
- Questions/Answers
- Report Preparation
|
|---|
| Assessment Methods and Criteria |
|
Quantity |
Percentage (%) |
| Mid-term |
1 |
25 |
| Quiz |
5 |
15 |
| Practice |
10 |
20 |
| Total(%) |
|
60 |
| Contribution of In-term Studies to Overall Grade(%) |
|
60 |
| Contribution of Final Examination to Overall Grade(%) |
|
40 |
| Total(%) |
|
100 |
|
| Language of Instruction | Turkish |
|---|
| Work Placement(s) | No |
|---|
Programme Qualifications / Learning Outcomes
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LO1 |
LO2 |
LO3 |
LO4 |
LO5 |
| K1 |
X |
X |
X |
X |
X |
| K2 |
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X |
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X |
X |
| K3 |
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X |
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X |
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| K4 |
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| K5 |
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X |
| K6 |
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| K7 |
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| K8 |
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| K9 |
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| K10 |
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| K11 |
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