Information Package

Program of Electrical and Electronics Engineering (English 30%)

EEM214

ELECTRONICS I

Course Code
EEM214
Semester
Fourth Term (Spring)
Theory+Practice
3 + 3
ECTS
7
Course TypeCompulsory Course
Course LevelBachelor's Degree
Year of Study2
SemesterFourth Term (Spring)
ECTS7
Name of Lecturer(s)
Learning Outcomes

At the end of this course, the students;

  1. Analyzes the characteristics of diode and rectifier circuits and solves related circuit problems.
  2. Explains the operating principles of BJT and FET (JFET, MOSFET) transistors and performs DC bias analysis.
  3. Performs AC analysis of BJT and FET-based amplifier circuits using small signal equivalent models; calculates gain and impedance parameters.
  4. Designs basic electronic circuits with transistors according to specified DC and AC criteria.
  5. Verifies theoretical knowledge by conducting experimental studies in a laboratory environment, analyzes data, and reports the results.
Mode of DeliveryFace to face
PrerequisitesYes(EEM201)
Recommended Optional Programme ComponentsMAT151, MAT152, MAT210
Course DescriptionStructure of atom, insulator, semiconductor materials, P and N type materials, Diodes, diod applications, Zener diode, Basic voltage regulator circuits, Other diode types, BJT transistors, structures, properties, CE, CB, CC BJT amplifiers, and biasing, Small signal analysis of BJT amplifiers, FET transistor types, structures, properties, Biasing FET amplifiers, Small signal analysis of FET amplifiers, gain, input and output impedances, Amplifier circuits with microelectronic approach, Current source circuits and biasing with current sources, Internal structures of operational amplifiers.
Course Contents
WEEK TOPICS
1st Week Properties of semiconductors, p and n type semiconductor materials.
2nd Week Junction diode. Structure and properties. Diode circuits. Clipper and Clamper circuits.
3rd Week Zener diode and circuits.
4th Week BJT, structure and properties.
5th Week BJT amplifier circuits. DC biasing. Design and analyses of bias circuits.
6th Week FET types, structures and properties.
7th Week Amplifier circuits using FETS. DC biasing. Design and analyses of bias circuits.
8th Week Midterm exam
9th Week AC models of BJT amplifiers. Voltage and current gains, input and output impedances.
10th Week AC models of BJT amplifiers. Voltage and current gains, input and output impedances.
11th Week AC models of FET amplifiers. Voltage and current gains, input and output impedances.
12th Week AC models of FET amplifiers. Voltage and current gains, input and output impedances.
13th Week Multistage amplifier circuits
14th Week Multistage amplifier circuits
Recommended or Required Reading1. Microelectronic Circuits, Sedra & Smith; Oxford University Press.
2. Microelectronic Circuit Design 3rd ed., R.C. Jaeger, Mc GrawHill Pub.
Planned Learning Activities and Teaching Methods
  • Lecture
  • Questions/Answers
  • Problem Solving
  • Experiment
  • Report Preparation
Assessment Methods and Criteria
Quantity Percentage (%)
Mid-term 1 35
Practice 9 25
Total(%) 60
Contribution of In-term Studies to Overall Grade(%) 60
Contribution of Final Examination to Overall Grade(%) 40
Total(%) 100
ECTS Allocated Based on Student Workload
Activities Quantity Duration (Hour) Total Workload (Hour)
Midterm exam 1 2 2
Preparation for Quiz 2 4 8
Individual or group work 13 4 52
Preparation for Final exam 1 15 15
Course hours 14 4 56
Preparation for Midterm exam 1 10 10
Laboratory (including preparation) 1 5 5
Final exam 1 2 2
Homework 4 15 60
Total Work Load210
Total Work Load / 30 (h)7
ECTS Credit of the Course7
Language of InstructionTurkish
Work Placement(s)No
LO1 LO2 LO3 LO4 LO5
K1 X X X
K2 X X X
K3 X
K4 X X X
K5 X
K6
K7
K8
K9 X
K10
K11